one watt high voltage transistor npn silicon maximum ratings rating symbol value unit collectoremitter voltage v ceo 300 vdc collectorbase voltage v cbo 300 vdc emitterbase voltage v ebo 6.0 vdc collector current e continuous i c 500 madc total device dissipation @ t a = 25 c derate above 25 c p d 1.0 8.0 watt mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 2.5 20 watts mw/ c operating and storage junction temperature range t j , t stg 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r ja 125 c/w thermal resistance, junction to case r jc 50 c/w electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collectoremitter breakdown voltage (1) (i c = 1.0 madc, i b = 0) v (br)ceo 300 e vdc collectorbase breakdown voltage (i c = 100 m adc, i e = 0) v (br)cbo 300 e vdc emitterbase breakdown voltage (i e = 100 m adc, i c = 0) v (br)ebo 6.0 e vdc collector cutoff current (v cb = 200 vdc, i e = 0) i cbo e 0.1 m adc emitter cutoff current (v eb = 6.0 vdc, i c = 0) i ebo e 0.1 m adc 1. pulse test: pulse width
300 s, duty cycle
2.0%. preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2001 october, 2001 rev. 4 909 publication order number: mpsw42/d mpsw42 case 2910, style 1 to92 (to226ae) 1 2 3 on semiconductor preferred device collector 3 2 base 1 emitter
mpsw42 http://onsemi.com 910 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics dc current gain (i c = 1.0 madc, v ce = 10 vdc) (i c = 10 madc, v ce = 10 vdc) (i c = 30 madc, v ce = 10 vdc) h fe 25 40 40 e e e e collectoremitter saturation voltage (i c = 20 madc, i b = 2.0 madc) v ce(sat) e 0.5 vdc baseemitter saturation voltage (i c = 20 madc, i b = 2.0 madc) v be(sat) e 0.9 vdc smallsignal characteristics currentgain e bandwidth product (i c = 10 madc, v ce = 20 vdc, f = 20 mhz) f t 50 e mhz collector capacitance (v cb = 20 vdc, i e = 0, f = 1.0 mhz) c cb e 3.0 pf figure 8.
mpsw42 http://onsemi.com 911 c, capacitance (pf) figure 1. dc current gain v r , reverse voltage (volts) 0.1 100 0.1 10 1.0 10 1000 c eb @ 1mhz figure 2. capacitance i c , collector current (ma) v, voltage (volts) 1.4 0.0 1.2 1.0 0.8 0.6 0.4 0.2 100 10 0.1 1.0 100 1.0 c cb @ 1mhz v be(on) @ 25 c, v ce = 10 v v ce(sat) @ 25 c, i c /i b = 10 v be(sat) @ 25 c, i c /i b = 10 v ce(sat) @ 125 c, i c /i b = 10 v ce(sat) @ -55 c, i c /i b = 10 v be(sat) @ 125 c, i c /i b = 10 v be(sat) @ -55 c, i c /i b = 10 v be(on) @ 125 c, v ce = 10 v v be(on) @ -55 c, v ce = 10 v figure 3. oono voltages i c , collector current (ma) 120 0.1 1.0 10 100 80 60 0 h fe , dc current gain t j = +125 c 25 c -55 c v ce = 10 vdc 100 20 40
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